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MAX16840
LED Driver with Integrated MOSFET
for MR16 and Other 12V AC Input Lamps
ABSOLUTE MAXIMUM RATINGS
IN, DRAIN to GND .................................................... -0.3V, +52V
EXT, COMP, REFI to GND....................................... -0.3V, +6.0V
FB, SOURCE to GND .............................................. -0.3V, +1.5V
Maximum RMS Current, FB, SOURCE to GND....................0.8A
Maximum RMS Current Through DRAIN and SOURCE ...... Q 2A
Continuous Power Dissipation (T A = +70 N C)
TDFN (derate 24.4mW/ N C above +70 N C) ..................1951mW
Any Pin to Any Pin ESD Rating ............................... ±2kV (HBM)
Operating Temperature Range ........................ -40 N C to +125 N C
Maximum Junction Temperature.....................................+150 N C
Storage Temperature Range............................ -65 N C to +150 N C
Lead Temperature (soldering, 10s) ................................+300 N C
Soldering Temperature (reflow) ......................................+260 N C
PACKAGE THERMAL CHARACTERISTICS (Note 1)
TDFN
Junction-to-Ambient Thermal Resistance ( B JA ) ......... 41 N C/W
Junction-to-Case Thermal Resistance ( B JC ) ................ 9 N C/W
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial .
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V IN = 12V; V EXT = V SOURCE = V FB = V GND = 0V; COMP, REFI, and DRAIN = open; T A = T J = -40 N C to +125 N C, unless otherwise
noted. Typical values are at T A = +25 N C.) (Note 2)
PARAMETER
Operating Voltage Range
SYMBOL
V IN
CONDITIONS
MIN
6.5
TYP
MAX
48
UNITS
V
When MOSFET fully on
1
2
IN Supply Current
I IN
When MOSFET switching, V COMP = 2V,
drain to 5V through 50 I
1.5
3
mA
Undervoltage Lockout
UVLO IN
IN rising
5
5.6
6.1
V
UVLO Hysteresis
200
mV
Overvoltage Protection on IN
V OVP
IN rising
43.6
46
48
V
OVP Hysteresis
1.2
V
Switching Frequency
Ramp P-P Voltage
270
300
2
330
kHz
V
FB Average Voltage
Transconductance
No-Load Gain
g m
A
T A = +25 N C
-40 ° C P T A P +125 N C
196
190
200
550
75
204
210
mV
F S
dB
COMP Sink Current
COMP Source Current
Power Switch On-Resistance
I SINK
I SOURCE
R DSON
V COMP = 2V, V FB = 0.65V
V COMP = 2V, V FB = 0V
I DS = 1A
150
70
250
115
0.1
350
160
0.2
F A
F A
I
Switch Leakage Current
DRAIN Rise Time
DRAIN Fall Time
I LEAK
t RDRAIN
t FDRAIN
V DRAIN = 48V, V COMP = 0V
I DS = 1A
I DS = 1A
10
10
25
F A
ns
ns
SOURCE Limit Threshold
V SOURCETH SOURCE connected to FB
0.66
0.72
0.78
V
2
Maxim Integrated
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